參數(shù)資料
型號: BYQ28EB-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SERV-SWITCH CPU CABLE FORACU/ACS EXTNDRS;SW613A5FT
中文描述: 5 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/8頁
文件大?。?/td> 62K
代理商: BYQ28EB-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
MIN.
-
-
-
-
TYP. MAX. UNIT
-
4.5
-
3
60
-
50
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 5 A; T
j
= 150C
I
F
= 5 A
I
F
= 10 A
V
R
= V
RWM
V
= V
; T
j
= 100C
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
F
= 1 A; V
30 V; -dI
F
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 5 A; V
R
30 V; -dI
F
/dt = 50 A/
μ
s
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.8
0.895
0.95
1.1
1.1
1.25
2
10
0.1
0.2
4
9
15
25
10
20
0.5
0.7
V
V
V
μ
A
mA
nC
ns
ns
A
I
R
Reverse current
Q
rr
t
rr1
t
rr2
I
rrm
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Peak reverse recovery
current
Forward recovery voltage
-
-
V
fr
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
-
1
-
V
October 1998
2
Rev 1.300
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