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參數(shù)資料
| 型號(hào)： | BYQ28E-200E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual ultrafast power diodes |
| 中文描述： | 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 123K |
| 代理商： | BYQ28E-200E |
BYQ28E-200E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 14 July 2011
3 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
Conditions
Min
-
-
-
-
Max
200
200
200
10
Unit
V
V
V
A
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
119 °C;
both diodes conducting; see
Figure 1
;
see
Figure 2
δ
= 0.5 ; t
p
= 25 μs; T
mb
≤
119 °C; per diode;
square-wave pulse
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
δ
= 0.001 ; t
p
= 2 μs
t
p
= 100 μs
I
FRM
repetitive peak forward current
-
10
A
I
FSM
non-repetitive peak forward
current
-
55
A
-
50
A
I
RRM
I
RSM
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
-
-
0.2
0.2
A
A
T
stg
T
j
Electrostatic discharge
V
ESD
-40
-
150
150
°C
°C
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 k
; all pins
-
8
kV
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
I
F(AV)
(A)
0
8
6
2
4
001aag976
4
2
6
8
P
tot
(W)
0
δ
= 1
0.2
0.1
0.5
001aag977
I
F(AV)
(A)
0
6
4
2
2
4
6
P
tot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
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| BYQ28E-200E,127 | 功能描述:二極管 - 通用，功率，開關(guān) DUAL ULTRAFAST PWR DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BYQ28E-200-E3/45 | 功能描述:整流器 10 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYQ28E-200HE3/45 | 功能描述:整流器 200 Volt 10A 20ns Dual Common Cathode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYQ28EB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Ultrafast Soft Recovery Rectifier |
| BYQ28EB-100 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common Cathode Ultrafast Rectifier |
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