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參數(shù)資料
| 型號： | BYM56B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 1.4 A, 400 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 48K |
| 代理商： | BYM56B |
1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
crest working reverse voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
continuous reverse voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
average forward current
200
400
600
800
1000
V
V
V
V
V
V
RWM
200
400
600
800
1000
V
V
V
V
V
V
R
200
400
600
800
1000
V
V
V
V
V
A
I
F(AV)
T
tp
= 60
°
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 65
°
C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
3.5
1.4
A
I
FSM
non-repetitive peak forward current
80
A
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