參數(shù)資料
型號(hào): BYM26E
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: INNOLINE: RP50-xxxxSB - Single Outputs up to 20A; Input/Output 1.6kVDC Isolation; Adjustable Output Voltage; No Minimum Load; Under -Voltage Lockout; Industry Standard Footprint; Fixed Operating Frequency; Halt Tested; Compact 36.83 x 57.91 x 12.7mm Package; High Efficiency
中文描述: 1.05 A, 1000 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 3/12頁
文件大小: 70K
代理商: BYM26E
1996 May 24
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYM26A to E
BYM26F and G
repetitive peak forward current
BYM26A to E
BYM26F and G
non-repetitive peak forward current
T
tp
= 55
°
C; see Figs 6 and 7
19
21
A
A
I
FRM
T
amb
= 65
°
C; see Figs 8 and 9
8.0
8.5
A
A
A
I
FSM
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
45
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Figs 12 and 13
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYM26A to E
BYM26F and G
forward voltage
BYM26A to E
BYM26F and G
reverse avalanche breakdown
voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
reverse current
I
F
= 2 A; T
j
= T
j max
;
see Figs 14 and 15
1.34
1.34
V
V
V
F
I
F
= 2 A;
see Figs 14 and 15
2.65
2.30
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
10
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.16
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
150
μ
A
t
rr
reverse recovery time
BYM26A to C
BYM26D and E
BYM26F and G
30
75
ns
ns
ns
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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