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參數(shù)資料
| 型號： | BYD33U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast soft-recovery controlled avalanche rectifiers |
| 中文描述： | SILICON, SIGNAL DIODE |
| 封裝： | HERMETICALLY SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 65K |
| 代理商： | BYD33U |
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYD33D to M
BYD33U and V
non-repetitive peak forward current
T
amb
= 65
°
C; see Figs 8 and 9
7
6
A
A
A
I
FSM
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
20
E
RSM
non-repetitive peak reverse
avalanche energy
BYD33D to J
BYD33K to V
storage temperature
junction temperature
10
mJ
mJ
°
C
°
C
7
T
stg
T
j
65
65
+175
+175
see Figs 12 and 13
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
I
F
= 1 A;
see Figs 14 and 15
I
R
= 0.1 mA
1.1
V
1.3
V
V
(BR)R
reverse avalanche breakdown
voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
reverse current
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.16
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
see Fig.21
1
100
μ
A
t
rr
reverse recovery time
BYD33D to J
BYD33K and M
BYD33U and V
diode capacitance
250
300
500
ns
ns
ns
pF
C
d
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
20
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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