參數(shù)資料
型號(hào): BYD127
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss rectifier
中文描述: 2 A, 200 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS, SOD-87, 2 PIN
文件頁數(shù): 2/8頁
文件大小: 48K
代理商: BYD127
1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
200
200
1
V
V
A
T
tp
= 145
°
C;
averaged over any 20 ms period;
see Figs 5 and 6
T
tp
= 95
°
C;
averaged over any 20 ms period;
see Figs 5 and 6
t = 10 ms half sinewave;
V
R
= V
RRMmax
2
A
I
FSM
non-repetitive peak forward current
25
A
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; see Fig.2; T
j
= 150
°
C;
I
F
= 1 A; see Fig.2
V
R
= V
RRMmax
; see Fig.3
V
R
= V
RRMmax
; T
j
= 150
°
C; see Fig.3
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
0.8
0.93
2
50
25
V
V
μ
A
μ
A
ns
I
R
reverse current
t
rr
reverse recovery time
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