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參數(shù)資料
| 型號(hào)： | BYD11G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 46K |
| 代理商： | BYD11G |
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
I
F(AV)
average forward current
T
tp
= 55
°
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 60
°
C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
t = 20
μ
s half sinewave;
T
j
= T
j max
prior to surge
0.50 A
0.37 A
I
FSM
non-repetitive peak forward current
10
A
P
RSM
non-repetitive peak reverse power
dissipation
storage temperature
200
W
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.5
+175
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
tzt
forward voltage
I
F
= 0.5 A; T
j
= T
j max
; see Fig.6
I
F
= 0.5 A; see Fig.6
I
R
= 0.1 mA
0.91
V
1.06
V
V
(BR)R
reverse avalanche
breakdown voltage
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
reverse current
225
450
650
900
1100
V
V
V
V
V
μ
A
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.7
V
R
= V
; T
j
= 165
°
C; see Fig.7
1
75
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
3
C
d
14
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
250
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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