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參數(shù)資料
| 型號： | BYD11 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 控制雪崩整流器 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 46K |
| 代理商： | BYD11 |
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
GRAPHICAL DATA
handbook, halfpage
IF(AV)
(A)
0
40
200
0.6
0.2
0
0.4
MBG042
80
120
160
Ttp (
o
C)
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
handbook, halfpage
IF(AV)
(A)
0
40
200
0.6
0.2
0
0.4
MBG051
80
120
160
Tamb (
o
C)
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
handbook, halfpage
P
(W)
0
0.2
0.4
0.6
0.6
0.2
0
0.4
MBG634
IF (AV) (A)
a
=
3
1.57
1.42
2.5
2
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
500
1000
0
100
MCD583
VR(V)
(o
j
D
G
J
K
M
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