參數(shù)資料
型號(hào): BYC15-600
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Hyperfast power diode
封裝: BYC15-600<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<,;
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 119K
代理商: BYC15-600
BYC15-600
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 30 A; T
j
= 150 °C; see
Figure 3
I
F
= 15 A; T
j
= 25 °C; see
Figure 3
I
F
= 15 A; T
j
= 150 °C; see
Figure 3
V
R
= 500 V; T
j
= 100 °C
V
R
= 600 V; T
j
= 25 °C
-
-
-
-
-
1.7
1.9
1.4
1.1
12
2.3
2.9
2
3
200
V
V
V
mA
μA
I
R
reverse current
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 100 °C; see
Figure 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/μs;
T
j
= 25 °C; see
Figure 4
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 25 °C; see
Figure 4
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 125 °C; see
Figure 4
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 50 A/μs;
T
j
= 125 °C; see
Figure 4
I
F
= 15 A; dI
F
/dt = 100 A/μs; T
j
= 25 °C;
see
Figure 5
-
32
40
ns
-
35
55
ns
-
19
-
ns
I
RM
peak reverse recovery
current
-
9.5
12
A
-
3
7.5
A
V
FR
forward recovery voltage
-
8
11
V
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Forward current as a function of forward
voltage
Fig 3.
Fig 4.
Forward recovery definitions
003aac082
0
10
20
30
40
50
0
1
2
3
4
V
F
(V)
I
F
(A)
(1)
(2)
(3)
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
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