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參數(shù)資料
| 型號： | BYC10-600CT |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual hyperfast power diode |
| 封裝： | BYC10-600CT<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 116K |
| 代理商： | BYC10-600CT |
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600CT
Fig.3. Maximum forward dissipation per diode as a
function of average forward current; rectangular
current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse recovery switching losses per
diode, as a function of rate of change of current dI
F
/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
, per diode as a
function of rate of change of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current per
diode, I
rrm
as a function of rate of change of current
dI
F
/dt.
0
1
2
3
4
5
6
7
8
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYC5-600
Rs = 0.09 Ohms
Vo = 1.3 V
150
137.5
125
112.5
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) C
D =
t
p
t
p
T
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100
1000
0
0.05
0.1
0.15
0.2
BYC5-600
f = 20 kHz
Tj = 125 C
VR = 400 V
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
10 A
7.5 A
100
1000
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
10 A
7.5 A
IF = 5 A
Tj = 125 C
VR = 400 V
100
1000
0
1
2
3
4
5
BYC5-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
VR = 400 V
IF = 5 A
7.5 A
10 A
100
1000
1
10
100
BYC5-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
10 A
March 2001
3
Rev 1.200
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| BYC10-600 | Hyperfast power diode |
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| BYC10D-600 | Hyperfast power diode |
| BYC10DX-600 | Hyperfast power diode |
| BYC10X-600 | Hyperfast power diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYC10-600CT,127 | 功能描述:整流器 RAIL PN DIODE RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| byc10-600ct127 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BYC10-600PQ | 制造商:NXP Semiconductors 功能描述:BYC10-600P/TO-220AC/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:DIODE HYPERFAST 600V TO-220AC |
| BYC10B-600 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diode ultrafast, low switching loss |
| BYC10B-600 /T3 | 功能描述:整流器 TAPE13 PWRDIODE RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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