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參數(shù)資料
| 型號： | BY479X-1700 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Damper diode fast, high-voltage |
| 中文描述： | 1700 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 42K |
| 代理商： | BY479X-1700 |
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 C
V
R
= V
RWMmax
V
R
= V
RWMmax
; T
j
= 125 C
MIN.
-
-
-
-
TYP.
0.95
0.85
-
-
MAX.
1.3
1.2
0.25
1.0
UNIT
V
V
mA
mA
I
R
Reverse current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
fr
Forward recovery voltage
t
fr
Forward recovery time
CONDITIONS
I
F
= 6.5 A; dI
F
/dt = 50 A/
μ
s
I
F
= 6.5 A; dI
F
/dt = 50 A/
μ
s; V
F
= 5 V
I
F
= 6.5 A; dI
/dt = 50 A/
μ
s; V
F
= 2 V
I
F
= 1 A; -dI
F
/dt = 50 A/
μ
s; V
R
≥
30 V
I
F
= 2 A; -dI
F
/dt = 20 A/
μ
s; V
R
≥
30 V
MIN.
-
-
-
-
-
TYP.
12
200
400
250
2.0
MAX.
19
300
-
350
3.0
UNIT
V
ns
ns
ns
μ
C
t
rr
Q
s
Reverse recovery time
Reverse recovery charge
September 1998
2
Rev 1.200
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