參數(shù)資料
型號: BY329F-1200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
中文描述: 7 A, 1200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 4/6頁
文件大?。?/td> 50K
代理商: BY329F-1200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25C
and 150C
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
1
10
100
BY329
-dIF/dt (A/us)
trr / ns
1000
100
10
1 A
IF = 10 A
Tj = 150 C
Tj = 25 C
10A
1A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BY229
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
1
100
100
10
1
10
1000
BY329
Cd / pF
VR / V
September 1998
4
Rev 1.200
相關(guān)PDF資料
PDF描述
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BY329X-1200 Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
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