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參數(shù)資料
| 型號(hào)： | BY329-1700S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| 中文描述： | 1700 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | BY329-1700S |
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1700S
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 C
V
R
= V
RWMmax
V
R
= V
RWMmax
; T
j
= 125 C
MIN.
-
-
-
-
TYP.
1.35
1.2
-
-
MAX.
1.65
1.5
250
1.0
UNIT
V
V
μ
A
mA
I
R
Reverse current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
fr
Forward recovery voltage
t
fr
Forward recovery time
t
rr
Reverse recovery time
Q
s
Reverse recovery charge
CONDITIONS
I
F
= 6.5 A; dI
F
/dt = 50 A/
μ
s
I
F
= 6.5 A; dI
/dt = 50 A/
μ
s; V
F
= 5 V
I
F
= 1 A; -dI
F
/dt = 50 A/
μ
s; V
R
≥
30 V
I
F
= 2 A; -dI
F
/dt = 20 A/
μ
s; V
R
≥
30 V
MIN.
-
-
-
-
TYP.
30
300
130
0.7
MAX.
40
320
170
1.0
UNIT
V
ns
ns
μ
C
September 1998
2
Rev 1.100
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| BY329-800 | Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes |
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|---|---|
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