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參數(shù)資料
| 型號： | BUZ906 |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應(yīng)用性（P溝道功率型馬鞍山場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | BUZ906 |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905
BUZ906
Characteristic
Test Conditions
V
GS
= 10V
I
D
= -10mA
V
DS
= 0
V
DS
= -10V
V
GD
= 0
Min.
-160
-200
±14
-0.15
Typ.
Max.
Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
-1.5
-12
-10
-10
0.7
2
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
≤
2%.
BUZ905
BUZ906
I
G
= ±100
μ
A
I
D
= -100mA
I
D
= -8A
V
DS
= -160V
BUZ905
V
DS
= -200V
BUZ906
I
D
= -3A
V
GS
= -10V
V
DS
= -10V
V
V
V
V
mA
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
734
300
26
120
60
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= -10V
f = 1MHz
V
DS
= -20V
I
D
= -5A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T — CASE TEMPERATURE (C)
C
Derating Chart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ907DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ908DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ907D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ908D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ907P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ906 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3 |
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3PBL |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 |
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