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參數(shù)資料
| 型號(hào)： | BUZ905X4S |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應(yīng)用性（P溝道功率型馬鞍山場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | BUZ905X4S |
* Pulse Test: Pulse Width = 300
μ
S , Duty Cycle
≤
2%
Characteristic
Test Conditions
Min.
–160
–200
±14
–0.1
Typ.
Max.
Unit
V
GS
= 10V
I
D
= –10mA
V
DS
= 0
V
DS
= –10V
V
GD
= 0
V
GS
= 10V
V
DS
= –160V
V
DS
= –200V
V
DS
= –10V
I
G
= ±100
μ
A
I
D
= –100mA
I
D
= –32A
I
D
= –5A
V
DS
= –10V
f = 1MHz
V
DS
= –20V
I
D
= –7A
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Drain – Source Cut–Off Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
BV
DSX
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
I
DSX
yfs*
C
iss
C
oss
C
rss
t
on
t
off
V
V
V
V
mA
mA
S
pF
nS
ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
Prelim. 4/94
–1.5
–12
–10
–10
6
2
TBE
TBE
TBE
TBE
TBE
MAGNA
Magnatec.
Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
G
S
D
BUZ905X4S
BUZ906X4S
NEW PRODUCT UNDER DEVELOPMENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ906X4S | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ905 | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ906 | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ907DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ908DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ906 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -200V, 8A, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 8A TO-3 |
| BUZ906 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3 |
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3PBL |
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