參數(shù)資料
型號(hào): BUZ905P
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場(chǎng)效應(yīng)管(用于音頻電路))
文件頁數(shù): 3/4頁
文件大?。?/td> 37K
代理商: BUZ905P
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905P
BUZ906P
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
=
1
2
5
W
CH
I
D
V — DRAIN – SOURCE VOLTAGE (V)
T = 25C
-7V
-6V
-5V
-4V
-3V
-2V
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
P
=
1
2
5
W
-4V
CH
I
D
V — DRAIN – SOURCE VOLTAGE (V)
-7V
-6V
-5V
-3V
-2V
T = 75C
I
D
V — DRAIN – SOURCE VOLTAGE (V)
T = 25C
-0.01
-0.1
-1
-10
-1
-10
-100
-1000
BUZ906
1
2
D
C
OPE
R
A
T
I
O
N
BUZ905
0.1
1
10
100
0
-1
-2
-3
-4
-5
-6
-7
-8
G
F
I — DRAIN CURRENT (A)
T = 75C
T = 25C
V = -20V
Typical Output Characteristics
Typical Output Characteristics
Forward Bias Safe Operating Area
Transconductance
0
-2
-4
-6
-8
-10
-12
-14
0
-2
-4
-6
-8
-10
V — GATE – SOURCE VOLTAGE (V)
V
D
T = 25C
I = -6A
I = -3A
I = -1A
T = 25C
I
D
V — GATE – SOURCE VOLTAGE (V)
0
-1
-2
-3
-4
-5
-6
-7
-8
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
T = 75C
T = 100C
V = -10V
Drain – Source Voltage
vs
Gate – Source Voltage
Typical Transfer Characteristics
相關(guān)PDF資料
PDF描述
BUZ906P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905X4S P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906X4S P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUZ905P 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247
BUZ905X4S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NEW PRODUCT UNDER DEVELOPMENT
BUZ906 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -200V, 8A, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 8A TO-3
BUZ906 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
BUZ906D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3