參數(shù)資料
型號(hào): BUZ905DP
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場(chǎng)效應(yīng)管(用于音頻電路))
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 39K
代理商: BUZ905DP
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ905DP
BUZ906DP
I = -14A
I = -5A
-1
-2
-3
-4
-5
-6
-7
-8
-9
0
-2
-4
-6
-8
-10
-12
-14
-16
V — GATE – SOURCE VOLTAGE (V)
V
D
T = 25C
I = -9A
I = -3A
I
D
V — GATE – SOURCE VOLTAGE (V)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
T = 25C
V = -10V
T = 100C
T = 75C
P
=
2
5
0
W
C
H
I
D
V — DRAIN – SOURCE VOLTAGE (V)
0
-10
-20
-30
-40
-50
-60
-70
-22
-2
-4
-6
8
-10
-12
-14
-16
-18
-20
0
-
T = 25C
-4V
-3V
-2V
-1V
-7V
-6V
-5V
Typical Transfer Characteristics
Typical Output Characteristics
P
=
2
5
0
W
-4V
C
H
I
D
V — DRAIN – SOURCE VOLTAGE (V)
0
-10
-20
-30
-40
-50
-60
-70
-22
-2
-4
-6
8
-10
-12
-14
-16
-18
-20
0
-
-3V
-2V
-1V
-7V
-6V
-5V
T = 75C
Typical Output Characteristics
Drain – Source Voltage
vs
Gate – Source Voltage
-
-
V — DRAIN – SOURCE VOLTAGE (V)
-1
-10
-100
-1000
I
D
-0.1
-1
-10
-100
T = 25C
D
C
O
P
E
R
ATO
N
BUZ905D
BUZ906D
Forward Bias Safe Operating Area
G
F
I — DRAIN CURRENT (A)
T = 25C
T = 75C
0
2
4
6
8
10
12
14
16
0.1
1
10
100
V = 20V
Transconductance
相關(guān)PDF資料
PDF描述
BUZ906DP P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
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