參數(shù)資料
型號(hào): BUZ905D
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場(chǎng)效應(yīng)管(用于音頻電路))
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 40K
代理商: BUZ905D
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905D
BUZ906D
Characteristic
Test Conditions
V
GS
= 10V
I
D
= -10mA
V
DS
= 0
V
DS
= -10V
V
GD
= 0
Min.
-160
-200
±14
-0.1
Typ.
Max.
Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
-1.5
-12
-10
-10
1.4
4
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
2%.
BUZ905D
BUZ906D
I
G
= ±100
μ
A
I
D
= -100mA
I
D
= -16A
V
DS
= -160V
BUZ905D
V
DS
= -200V
BUZ906D
I
D
= -3A
V
GS
= 10V
V
DS
= -10V
V
V
V
V
mA
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
1900
900
60
150
110
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
50
100
150
200
250
300
0
0
25
50
75
100
125
150
T — CASE TEMPERATURE (C)
C
Derating Chart
相關(guān)PDF資料
PDF描述
BUZ906D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ905X4S P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ906X4S P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUZ905D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
BUZ905DP 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 16A TO-3PBL
BUZ905P 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-247 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -160V, 8A, TO-247; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 8A TO-247
BUZ905P 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247
BUZ905X4S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NEW PRODUCT UNDER DEVELOPMENT