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參數(shù)資料
| 型號(hào)： | BUZ80A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -頻道800V的- 2.5ohm - 3.8A -到220快速功率MOS器件 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | BUZ80A |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 600 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 400 V
I
D
= 2.3 A
V
GS
= 10 V
65
150
90
200
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 3.8 A
V
GS
= 10 V
80
110
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 5 A
V
GS
= 10 V
55
8
26
70
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 600 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 3.8 A
V
GS
= 10 V
110
140
150
145
190
200
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
3.8
15
A
A
V
SD
(
)
t
rr
I
SD
= 4 A
V
GS
= 0
2
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A
V
DD
= 100 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
500
4.3
17
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
BUZ80A
3/9
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|---|---|
| BUZ80A | 制造商:Infineon Technologies AG 功能描述:MOSFET N TO-220 ((NW)) |
| BUZ80AC67078-S1309-A3 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:TRANSISTOR TO 220 MOSFET N KANAL |
| BUZ80AFI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k) |
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