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參數(shù)資料
| 型號(hào)： | BUZ72A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 中文描述： | ? -通道增強(qiáng)型功率MOS晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 112K |
| 代理商： | BUZ72A |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2.14
62.5
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
11
A
E
AS
36
mJ
E
AR
9
mJ
I
AR
7
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
100
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
j
= 125
o
C
250
1000
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
2.9
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
0.23
0.25
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
I
D
= 5 A
2.7
4.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
330
90
25
450
120
40
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
GS
= 4.7
I
D
= 5.5 A
V
GS
= 10 V
10
50
25
20
15
75
40
30
ns
ns
ns
ns
BUZ72A
2/7
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