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參數資料
| 型號： | BUXD87T4 |
| 英文描述： | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 500MA I(C) | TO-252 |
| 中文描述： | 晶體管|晶體管|叩| 450V五（巴西）總裁| 500mA的一（c）|至252 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BUXD87T4 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 1000 V
V
CE
= 1000 V
T
j
= 125
o
C
100
1
μ
A
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
Collector-Emitter
Sustaining Voltage
Collector-Base
Sustaining Voltage
Collector-Emitter
Saturation Voltage
V
EB
= 5 V
1
mA
V
CEO(sus)
I
C
= 100 mA
450
V
V
BEO
I
C
= 10 mA
5
V
V
CE(sat)
I
C
= 0.1 A
I
C
= 0.2 A
I
B
= 0.01 A
I
B
= 0.02 A
0.8
1
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= 0.2 A
I
B
= 0.02 A
1
V
h
FE
I
C
= 50 mA
I
C
= 40 mA
V
CE
= 5 V
V
CE
= 5 V
12
50
f
T
Transition Frequency
I
C
= 50 mA
V
CE
= 10 V f=1MHz
20
MHz
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 250 V
I
B1
= 40 mA
t
p
= 20
μ
s
I
C
= 200 mA
I
B2
= -80 mA
4.5
0.5
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingArea
DeratingCurves
BUXD87
2/6
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