參數(shù)資料
型號(hào): BUX98C
廠商: 意法半導(dǎo)體
英文描述: HIGH POWER NPN SILICON TRANSISTOR
中文描述: 大功率NPN硅晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 41K
代理商: BUX98C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
Collector Cut-off
Current (V
BE
= 0 )
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
1
8
mA
mA
I
CES
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
1
6
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
CE
= V
CEO
2
mA
I
EBO
V
CB
= 5 V
2
mA
I
C
= 100 mA
700
V
I
C
= 12 A I
B
= 3 A
I
C
= 16 A I
B
= 5 A
I
C
= 20 A I
B
= 8 A
1.5
2
3
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 3 A
I
C
= 20 A I
B
= 8 A
RESISTIVE LOAD
VCC = 250 V I
C
= 12 A
I
B1
= - I
B2
= 3 A
1.6
2
V
V
μ
s
μ
s
μ
s
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
0.5
1.5
0.2
1
3
0.8
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1.5 %
BUX98C
2/4
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