
BUX87
HIGH VOLTAGE SILICON POWER TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPE
I
NPN TRANSISTOR
I
HIGH VOLTAGECAPABILITY (450V V
CEO
)
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
HIGH DCCURRENT GAIN
APPLICATIONS
I
FLYBACKAND FORWARD SINGLE
TRANSISTOR LOWPOWER CONVERTERS
DESCRIPTION
The BUX87 is manufactured using High Voltage
Multi
Epitaxial
Planar
switching speeds and high voltage withstand
capability.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
1000
450
5
0.5
1
0.3
0.6
40
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
3
21
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