參數(shù)資料
型號(hào)： BUX84S
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN high voltage Power transistor
中文描述： 2 A, 400 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 2/4頁
文件大?。?/td> 29K
代理商： BUX84S
Philips Semiconductors
Product specification
NPN high voltage
Power transistor
BUX84S
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
2.5
K/W
pcb mounted, FR4 board, minimum
footprint
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
T
= 25C unless otherwise specified
For characteristic curves, refer to BUX84 data sheet.
SYMBOL PARAMETER
V
CEO(sust
Collector-emitter sustaining
voltage
V
CE(SAT)
Collector-emitter saturation
voltage
V
BE(SAT)
Base-emitter saturation
voltage
I
CES
Collector-emitter cut-off
current
I
EBO
Emitter-base cut-off current
h
FE
DC current gain
CONDITIONS
I
C
= 100 mA; I
B(OFF)
= 0 A; L = 25 mH
MIN.
400
TYP. MAX. UNIT
-
-
V
I
C
= 0.3 A; I
= 30 mA
I
C
= 1 A; I
B
= 0.2 A
I
C
= 1 A; I
B
= 0.2 A
-
-
-
-
-
-
0.8
1
1.1
V
V
V
V
CEM
= 800 V; V
BE
= 0 V
V
CEM
= 800 V; V
= 0 V; T
j
= 125C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
V
CE
= 5 V; I
C
= 100 mA
V
CE
= 10 V; I
C
= 200 mA; f = 1 MHz
I
C(on)
= 1 A; I
B(on)
= 200 mA; I
B(off)
= -400 mA;
V
CC
= 250 V
T
j
T
j
= 95C
-
-
-
-
-
-
-
200
1.5
1
-
100
-
0.5
μ
A
mA
mA
15
20
-
-
50
20
0.2
f
T
t
on
Transition frequency
Turn-on time
MHz
μ
s
t
f
Fall time
-
-
-
0.4
-
2
-
μ
s
μ
s
μ
s
1.4
3.5
t
s
Storage time
February 1999
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BY329-1500 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
BY329-1500S Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
BY329-1700S Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
BY329-800 Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
BY329X-1700S Damper diode fast, high-voltage
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUX84-S 功能描述:兩極晶體管 - BJT 800V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUX85 功能描述:兩極晶體管 - BJT 2A 450V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUX85,127 功能描述:兩極晶體管 - BJT BUX85/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUX85 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-220AB
BUX85/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR
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