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參數(shù)資料
| 型號(hào)： | BUX10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH POWER NPN SILICON TRANSISTOR |
| 中文描述： | 大功率NPN硅晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | BUX10 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 100 V
1.5
mA
I
CEX
Collector Cut-off
Current
V
CE
= 160 V V
BE
= -1.5V
T
case
= 125
C
V
CE
= 160 V V
BE
= -1.5V
V
EB
= 5 V
1.5
6
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
1
mA
I
C
= 200 mA
125
V
I
E
= 50 mA
7
V
I
C
= 10 A I
B
= 1 A
I
C
= 20 A I
B
= 2 A
I
C
= 20 A I
B
= 2 A
0.3
0.7
0.6
1.2
V
V
1.6
2
V
I
C
= 10 A V
CE
= 2 V
I
C
= 20 A V
CE
= 4 V
20
10
60
I
S/b
Second Breakdown
Collector Current
V
CE
= 30 V t = 1 s
V
CE
= 48 V t = 1 s
I
C
= 1 A V
CE
=15 V
f = 10MHz
I
C
= 20 A I
B1
= 2 A
V
CC
= 30V
I
C
= 20 A I
B1
= - I
B2
= 2A
V
CC
= 30V
V
clamp
=125 V
L = 500
μ
H
5
1
A
A
f
T
Transistor Frequency
8
MHz
t
on
Turn-on Time
0.5
1.5
μ
s
t
s
t
f
Storage Time
Fall Time
0.6
0.15
1.2
0.3
μ
s
μ
s
A
Clamped E
s/b
Collector Current
20
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
BUX10
2/4
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