參數(shù)資料
型號: BUW11F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 9/12頁
文件大小: 88K
代理商: BUW11F
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT199
97-06-27
D
m
L
L1
b1
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
SOT199
α
45
°
A
A1
Q
c
Note
1. Terminals in this zone are not tinned.
e1
e
b
w
M
1
2
3
P
E1
q
E
α
UNIT
D
e
q
Q
P
L
c
e1
A
10.9
mm
5.2
4.8
A1
3.4
3.0
b
1.2
1.0
b1
2.1
1.9
0.6
0.5
21.5
20.5
E
1
7.8
6.8
E
15.3
14.7
5.45
16.5
15.7
0.4
L1
(1)
3.7
3.3
2.1
1.9
m
0.8
0.6
6.2
5.8
w
3.3
3.1
DIMENSIONS (mm are the original dimensions)
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