參數(shù)資料
型號(hào): BUW11AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 79K
代理商: BUW11AW
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
Note
1.
Measured with a half-sinewave voltage (curve tracer).
Switching times resistive load
(see Figs 11 and 12)
t
on
turn-on time
BUW11W
BUW11AW
storage time
BUW11W
BUW11AW
fall time
BUW11W
BUW11AW
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
1
1
μ
s
μ
s
t
s
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
4
4
μ
s
μ
s
t
f
I
Con
= 3 A; I
Bon
=
I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 500 mA
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 13 and 14)
t
s
storage time
BUW11W
I
Con
= 3 A; I
B
= 600 mA
I
Con
= 3 A; I
B
= 600 mA;
T
j
= 100
°
C
I
Con
= 2.5 A; I
B
= 500 mA
I
Con
= 2.5 A; I
B
= 500 mA;
T
j
= 100
°
C
1.1
1.2
1.4
1.5
μ
s
μ
s
BUW11AW
1.1
1.2
1.4
1.5
μ
s
μ
s
t
f
fall time
BUW11W
I
Con
= 3 A; I
B
= 600 mA
I
Con
= 3 A; I
B
= 600 mA;
T
j
= 100
°
C
I
Con
= 2.5 A; I
B
= 500 mA
I
Con
= 2.5 A; I
B
= 500 mA;
T
j
= 100
°
C
80
140
150
300
ns
ns
BUW11AW
80
140
150
300
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
相關(guān)PDF資料
PDF描述
BUW11W Silicon diffused power transistors
BUW12AF Silicon diffused power transistors
BUW12F Silicon diffused power transistors
BUW12AW Silicon diffused power transistors
BUW12W Silicon diffused power transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUW11AW/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR
BUW11F 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BUW11W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors
BUW12 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BUW1215 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN 700V 16A TO-247