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參數(shù)資料
| 型號(hào)： | BUV27 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Power NPN Silicon Transistor(硅平面多外延工藝NPN晶體管) |
| 中文描述： | 中功率NPN硅晶體管（硅平面多外延工藝npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | BUV27 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
0
)
Collector Cut-off
Current
V
CE
= 240V
T
c
= 125
o
C
V
CE
= 240V
V
BE
= -1.5V T
c
= 125
o
C
3
mA
I
CEX
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
V
EB
= 5 V
1
mA
I
C
= 0.2 A L = 25mH
120
V
I
E
= 50mA
7
30
V
I
C
= 4A I
B
= 0.4A
I
C
= 8A I
B
= 0.8A
0.7
1.5
V
V
I
C
= 8A I
B
= 0.8A
2
V
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
V
CC
= 90V I
C
= 8A
V
BE
= - 6V I
B1
= 0.8A
R
BB
= 3.75
0.4
0.5
0.12
0.8
1.2
0.25
ms
μ
s
μ
s
t
s
t
f
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall Time
Storage Time
Fall Time
V
CC
= 90V I
C
= 8A
I
B1
= 0.8A V
BE
= - 5V
L
B
= 1
μ
H
V
CC
= 90V I
C
= 8 A
I
B1
= 0.8A V
BE
= - 5V
L
B
= 1
μ
H T
j
= 125
o
C
0.6
0.04
2
0.15
μ
s
μ
s
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle = 2 %
BUV27
2/4
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|---|---|
| BUV27_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEDIUM POWER NPN SILICON TRANSISTOR |
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