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參數(shù)資料
| 型號(hào)： | BUT90 |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH POWER NPN SILICON TRANSISTOR |
| 中文描述： | 大功率NPN硅晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 66K |
| 代理商： | BUT90 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
Collector Cut-off
Current
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.4
4
mA
mA
I
CEV
V
CE
= V
CEV
V
BE
= -1.5V
V
CE
= V
CEV
V
BE
= -1.5V T
c
= 100
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 7 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB0
Emitter-Base Voltage
(IC = 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.2 A L = 25 mH
125
V
I
E
= 50 mA
10
V
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 70 A I
B
= 7 A T
c
= 100
o
C
0.55
0.8
0.75
1.2
0.9
0.9
1.2
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
1
1.45
1
1.65
1.3
1.8
1.4
2
V
V
V
V
RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 100 V I
C
= 70 A
I
B1
= - I
B2
= 7 A t
p
= 30
μ
s
0.8
0.9
0.2
1.2
1.5
0.4
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 100 V I
C
= 70 A
I
B1
= - I
B2
= 7 A t
p
= 30
μ
s
T
c
= 100
o
C
1.1
1.2
0.3
1.6
2
0.6
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
Storage Time
Fall Time
V
CC
= 100 V V
Clamp
= 125 V
I
C
= 70 A I
B1
= - I
B2
= 7 A
L
C
= 70
μ
H
V
CC
= 100 V V
Clamp
= 125 V
I
C
= 70 A I
B1
= - I
B2
= 7 A
L
C
= 70
μ
H T
c
= 100
o
C
1.25
0.16
2
0.3
ms
μ
s
t
s
t
f
Storage Time
Fall Time
1.5
0.25
2.2
0.5
μ
s
μ
s
* Pulsed : Pulse duration = 300
μ
s, duty cycle = 2%
BUT90
2/4
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