參數(shù)資料
型號(hào)： BUPD1520
廠商： Power Innovations International, Inc.
英文描述： NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
中文描述： NPN硅晶體管，二極管集成
文件頁數(shù)： 1/5頁
文件大?。?/td> 115K
代理商： BUPD1520
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1999 - REVISED SEPTEMBER 1999
Copyright 1999, Power Innovations Limited, UK
G
Designed for Self Oscillating Inverter
Applications
G
Rugged 1500 V Planar Construction
G
Integral Free-Wheeling Anti-Parallel Diode
device symbol
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
B
C
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
=
10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (I
B
= 0)
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (I
C
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
T
L
700
1500
11
2
2.5
2
2.5
50
V
V
V
A
A
A
A
W
°C
°C
°C
-55 to +125
-55 to +150
300
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