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參數(shù)資料
| 型號： | BULB49DT4 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 252K |
| 代理商： | BULB49DT4 |
7/7
BULB49D
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BULD118-1 | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管) |
| BULD118D-1 | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管) |
| BULK118 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUR50S | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| BUR51 | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULB7216 | 制造商:STMicroelectronics 功能描述: |
| BULB7216-1 | 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULB7216T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULB742C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| BULB742C-1 | 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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