參數(shù)資料
型號(hào): BUL89
廠(chǎng)商: 意法半導(dǎo)體
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開(kāi)關(guān)NPN電源晶體管
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 70K
代理商: BUL89
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case
Max
1.14
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwisespecified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 850 V
V
CE
= 850 V
T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
100
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
L = 25 mH
400
V
I
E
= 10 mA
9
V
I
C
= 5 A
I
C
= 8 A
I
C
= 12 A
I
B
= 1 A
I
B
= 1.6 A
I
B
= 2.4 A
1
1.5
5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5 A
I
C
= 8 A
I
B
= 1 A
I
B
= 1.6 A
1.3
1.6
V
V
h
FE
DC Current Gain
I
C
= 5 A
I
C
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
10
10
40
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 8 A
V
BE(off)
= -5 V
V
CL
= 350 V
I
C
= 8 A
V
BE(off)
= -5 V
V
CL
= 350 V
T
j
= 100
o
C
I
B1
= 1.6 A
R
BB
= 0
L = 200
μ
H
I
B1
= 1.6 A
R
BB
= 0
L = 200
μ
H
1.5
55
2.3
110
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
1.9
80
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
SafeOperating Area
Derating Curve
BUL89
2/6
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