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參數(shù)資料
| 型號： | BUL85D |
| 廠商： | 意法半導體 |
| 英文描述： | MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 中壓快速開關NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 244K |
| 代理商： | BUL85D |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
CE
= 500 V
V
CE
= 500 V T
j
= 125
o
C
V
EB
= 9 V
100
500
I
EBO
100
V
(BR)EBO
I
E
= 10mA
10
18
V
I
C
= 10 mA L = 25 mH
250
V
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 0.8 A
I
C
= 8 A I
B
= 1.6 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 8 A I
B
= 1.6 A
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.5 A V
CE
= 5 V
I
C
= 14 A V
CE
= 10 V
0.1
0.3
0.6
1.2
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
1.1
1.5
V
V
h
FE
DC Current Gain
10
4
60
10
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A V
CC
= 150 V
I
B(on)
= -I
B(off)
= 0.8 A
t
p
≥
30
μ
s (see figure 2)
I
C
= 4 A V
CL
= 200 V
I
B
= 0.8 A V
BE(off)
= -3 V
R
BB
= 0
t
p
≥
30
μ
s
(see figure 1)
I
C
= 5 A
1.2
1.8
2.4
250
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
0.7
50
μ
s
ns
V
f
Diode Forward Voltage
1.5
V
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUL85D
2/7
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| BUL87 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220VAR |
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| BUL903ED | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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