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參數(shù)資料
| 型號： | BUL804 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86% |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 204K |
| 代理商： | BUL804 |
BUL804
2/7
Table 2: Absolute Maximum Ratings
Table 3: Thermal Data
R
thj-case
R
thj-amb
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
* Pulsed: Pulsed duration = 300 μs, duty cycle
≤
1.5
%.
Symbol
Parameter
Value
Unit
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
800
V
450
V
8
V
4
A
Collector Peak Current (t
p
< 5ms)
Base Current
8
A
2
A
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
C
= 25
o
C
Storage Temperature
4
A
70
W
-65 to 150
°C
Max. Operating Junction Temperature
150
°C
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= -1.5 V)
V
CE
= 800 V
V
CE
= 800 V T
j
= 125
o
C
I
E
= 10 mA
100
500
μA
μA
V
EBO
Emitter-Base Voltage
(I
C
= 0 )
8
V
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
I
CEO
Collector Cut-off Current
(I
B
= 0)
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 100 mA L = 25 mH
450
V
V
CE
= 450 V
250
μA
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 10 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
V
CC
= 300 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
T
p
= 30 μs (see figure 11)
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5 V R
BB
= 0
W
V
clamp
= 360 V (see figure 10)
0.8
1.2
V
V
V
BE(sat)
*
Base-Emitter Saturation
Voltage
1.2
1.3
V
V
h
FE
DC Current Gain
10
10
20
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
1.8
0.1
2.6
0.25
μs
μs
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
0.6
0.1
1
0.2
μs
μs
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