參數(shù)資料
型號: BUL72B
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
中文描述: 8 A, 100 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 2/2頁
文件大?。?/td> 21K
代理商: BUL72B
BUL72B
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
Parameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
100
250
10
10
100
100
10
100
80
60
50
30
25
20
0.2
0.5
0.8
1.1
1.3
20
44
V
μ
A
μ
A
μ
A
V
V
MHz
pF
I
C
= 10mA
I
C
= 1mA
I
E
= 1mA
V
CB
= 250V
T
C
= 125°C
V
CE
= 120V
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.3A
I
C
= 3A
I
C
= 5A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 0.1A
I
B
= 0.3A
I
B
= 0.5A
I
B
= 0.3A
I
B
= 0.5A
I
C
= 1A
I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 5A
I
C
= 0.2A
V
CB
= 10V
V
CE
= 4V
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
μ
s ,
δ
< 2%
DYNAMIC CHARACTERISTICS
相關(guān)PDF資料
PDF描述
BUL74A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL74B POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BUL76A POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
BUL76B RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89%
BUP50A NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUL72BLCC4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN
BUL72B-LCC4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 8A I(C) | LLCC
BUL741 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL741_0707 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
BUL741FP 功能描述:兩極晶體管 - BJT NPN HI-VOLT FAST SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2