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參數(shù)資料
| 型號： | BUL7216 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 172K |
| 代理商： | BUL7216 |
BUL7216
2 Electrical Characteristics
3/10
2
Electrical Characteristics
Table 3.
Electrical Characteristics
(T
CASE
= 25°C; unless otherwise specified)
Note: 1 Pulsed duration = 300
μ
s, duty cycle
≤
1.5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
= 0)
V
CE
= 1600 V
V
CE
= 1600 V
__ __
T
C
= 125°C
0.1
0.5
mA
mA
I
CEO
Collector Cut-off Current
(I
B
= 0)
V
CE
= 680 V
0.1
mA
I
CBO
Collector Cut-off Current
(I
E
= 0)
V
CB
= 1600 V
V
CB
= 1600 V
__ _
T
C
= 125°C
0.1
0.5
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 12 V
1
mA
V
(BR)CEO
Note: 1
Collector-Emitter Breakdown
Voltage (I
B
= 0)
I
C
= 1 mA L = 125 mH
700
V
V
(BR)EBO
Note: 1
Emitter-Base Breakdown Voltage
(I
C
= 0)
I
E
= 1 mA
12
V
V
(BR)CES
Collector-Emitter Breakdown
Voltage (V
BE
= 0)
I
C
= 0.1 mA
1600
V
V
CE(sat)
Note: 1
Collector-Emitter Saturation
Voltage
I
C
= 0.25 A
_ _
I
B
= 25 mA
I
C
= 0.5 A
__ _
I
B
= 50 mA
I
C
= 0.8 A
__ _
I
B
= 80 mA
1
1.5
3
V
V
V
V
BE(sat)
Note: 1
Base-Emitter Saturation VoltageI
C
= 0.5A
____
I
B
= 100 mA
I
C
= 1A
_____
I
B
= 100 mA
I
C
= 2A
_____
I
B
= 400 mA
1
1.1
1.2
V
V
V
h
FE
Note: 1
DC Current Gain
I
C
= 0.5 A
_
V
CE
= 1 V
I
C
= 0.5 A
____
V
CE
= 3 V
I
C
= 2 A
V
CE
= 5 V
I
C
= 1 A
V
CE
= 10 V
7
16
4
19
18
35
11
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 0.5 A
___
V
CC
= 125 V
I
B1
= 50 mA
__
I
B2
= -0.5 A
P.W.
= 300
μ
s D.C. = 2 %
(see figure 9)
0.9
0.35
μ
s
μ
s
t
d
t
r
RESISTIVE LOAD
Delay Time
Rise Time
I
C
= 0.5 A
___
V
CC
= 125 V
I
B1
= 50 mA
__
I
B2
= -0.5 A
P.W.
= 300
μ
s D.C. = 2 %
(see figure 9)
0.3
1.1
μ
s
μ
s
E
a/r
Repetitive Avalanche Energy
L = 2 mH
___
C
= 1.8 nF
V
BE(off)
= -5 V (see figure 8)
8
mJ
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