參數(shù)資料
型號(hào)： BUL68A
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
中文描述： 7 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-251
封裝： IPAK-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 19K
代理商： BUL68A
BUL68A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
Parameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
160
350
10
10
100
100
10
100
90
60
30
25
8
0.1
0.3
1
0.2
0.6
1.5
1.1
1.4
20
30
V
μ
A
μ
A
μ
A
—
V
V
MHz
pF
I
C
= 10mA
I
C
= 1mA
I
E
= 1mA
V
CB
= 350V
T
C
= 125°C
V
CE
= 150V
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.3A
I
C
= 2A
I
C
= 4A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 1V
T
C
= 125°C
I
B
= 0.1A
I
B
= 0.3A
I
B
= 0.4A
I
B
= 0.3A
I
B
= 0.4A
I
C
= 1A
I
C
= 3A
I
C
= 4A
I
C
= 3A
I
C
= 4A
I
C
= 0.2A
V
CB
= 10V
V
CE
= 4V
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
μ
s ,
δ
< 2%
DYNAMIC CHARACTERISTICS
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