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參數(shù)資料
| 型號(hào)： | BUL654 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 54K |
| 代理商： | BUL654 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1.25
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
V
CE
= 700 V
V
CE
= 700 V T
c
= 125
o
C
V
CE
= 400 V
50
500
I
CEO
100
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
I
C
= 100 mA L = 25 mH
400
V
I
E
= 10 mA
9
V
I
C
= 2 A I
B
= 0.4 A
I
C
= 7 A I
B
= 1.4 A
0.15
0.35
0.3
0.7
V
V
I
C
= 2 A I
B
= 0.4 A
I
C
= 7 A I
B
= 1.4 A
I
C
= 10 mA V
CE
= 2 V
I
C
= 2 A V
CE
= 2 V
I
C
= 6 A V
CE
= 2 V
I
C
= 12 A V
CE
= 5 V
0.85
1
1
1.2
V
V
15
15
7
4
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUL654
2/4
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| BUL65A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN |
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