- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369569 > BUL52 (TT electronics Semelab Limited) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | BUL52 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| 中文描述： | 先進(jìn)的分布式基礎(chǔ)設(shè)計(jì)的高壓高速NPN硅功率晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | BUL52 |
BUL52A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
MILITARY AND HI–REL OPTIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
1000V
500V
10V
6A
10A
2.5A
100W
–55 to 150°C
MECHANICAL DATA
Dimensions in mm
1 2 3
1
10.2
6
4.5
1.3
3.6 Dia.
1.3
1
1
0.85
2.54
0.5
2.54
Pin 1 – Base
TO220
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL52AFI | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL52B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL52BFI | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL53BSMD | Advanced Distributed Base Design,High Voltage,High Speed NPN Silicon Power Transistor(高級(jí)分布式設(shè)計(jì)的高電壓,高速功率NPN硅晶體管) |
| BUL53BSMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL52A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL52AFI | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL52ASMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| BUL52B | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon Power Transistors |
| BUL52BFI | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。