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參數(shù)資料
| 型號： | BUL510 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | BUL510 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.25
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1000 V
V
CE
= 1000 V
T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
V
CE
= 450 V
250
V
CEO(sus)
I
C
= 100 mA
L = 25 mH
450
V
V
EBO
I
E
= 10 mA
9
V
V
CE(sat)
I
C
= 3 A
I
C
= 4 A
I
C
= 5 A
I
C
= 3 A
I
C
= 5 A
I
B
= 0.6 A
I
B
= 0.8 A
I
B
= 1.25 A
I
B
= 0.6 A
I
B
= 1.25 A
0.8
1
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
1.2
1.5
V
V
h
FE
DC Current Gain
I
C
= 1 A
I
C
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
15
10
45
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A
I
B1
= 0.8 A
L = 200
μ
H
I
C
= 4 A
I
B1
= 0.8 A
L = 200
μ
H
V
CL
= 300 V
I
B2
= -1.6 A
2.2
80
3.4
150
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
CL
= 300 V
I
B2
= -1.6 A
T
j
= 125
o
C
3
120
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe OperatingAreas
DeratingCurve
BUL510
2/6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL510_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL51A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 30A I(C) | SOT-93 |
| BUL51B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 40A I(C) | SOT-93 |
| BUL52 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL52A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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