參數(shù)資料
型號: BUL416B
廠商: 意法半導(dǎo)體
英文描述: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 高壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 2/8頁
文件大小: 218K
代理商: BUL416B
BUL416
2/8
Table 3: Thermal Data
R
thj-case
R
thj-amb
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
* Pulsed: Pulsed duration = 300
m
s, duty cycle
1.5
%.
#
Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups ac-
cording to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
T
J
Max. Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Unit
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.14
62.5
o
C/W
o
C/W
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off Current
(V
BE
=0 V)
V
CE
= 1600 V
V
CE
= 1600 V T
j
= 125
o
C
V
CE
= 800 V
100
500
μA
μA
I
CEO
Collector Cut-off Current
(I
B
= 0)
250
μA
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
V
EBO
Emitter-Base Voltage
(I
C
= 0 )
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 100 mA L = 25 mH
800
V
I
E
= 10 mA
9
V
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 1.33 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 1.33 A
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.7 A V
CE
= 5 V
Group A
Group B
I
C
= 3 A I
B1
= 1 A
V
BE(off)
= -5 V R
BB
= 0
W
V
clamp
= 200 V L = 200 μH
(see figure 12)
I
C
= 3 A I
B1
= 1 A
V
BE(off)
= -5 V R
BB
= 0
W
V
clamp
= 200 V L = 200 μH
T
j
= 100
o
C (see figure 12)
1.5
3
V
V
V
BE(sat)
*
Base-Emitter Saturation
Voltage
1.2
1.5
V
V
h
FE
*
DC Current Gain
10
12
25
27
40
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
2.3
650
μs
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
3
680
μs
ns
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