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參數(shù)資料
| 型號(hào)： | BUL381 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高電壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高電壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BUL381 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V
T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
V
CE
= 400 V
250
V
CEO(sus)
I
C
= 100 mA
L = 25 mH
400
V
V
EBO
I
E
= 10 mA
9
V
V
CE(sat)
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.8 A
I
B
= 0.2 A
I
B
= 0.4 A
0.5
0.7
1.1
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
1.1
1.2
V
V
h
FE
DC Current Gain
I
C
= 2 A
I
C
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
8
10
t
ON
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
V
CC
= 250 V
I
B1
= 0.4 A
(for BUL381only)
t
p
= 30
μ
s
V
CC
= 250 V
I
B1
= 0.4 A
(for BUL382 only)
t
p
= 30
μ
s
I
C
= 2 A
I
B1
= 0.4 A
L = 200
μ
H
I
C
= 2 A
I
B1
= 0.4 A
L = 200
μ
H
I
C
= 2 A
I
B2
= -0.4 A
1.4
1
2.2
800
μ
s
μ
s
ns
t
ON
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
I
C
= 2 A
I
B2
= -0.4 A
1.7
1
2.5
800
μ
s
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
CL
= 250 V
I
B2
= -0.8 A
1.7
75
2.6
120
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
CL
= 250 V
I
B2
= -0.8 A
T
j
= 125
C
2.6
150
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUL381/ BUL382
2/7
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|---|---|
| BUL39 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL3N7 | MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL3P5 | MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| BUL416B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL49D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL381D | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL381D_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL382 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL382D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| BUL38D | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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