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參數(shù)資料
| 型號： | BUL312FP |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 149K |
| 代理商： | BUL312FP |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1150 V
V
CE
= 1150 V T
j
= 125
o
C
1
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 500 V
250
μ
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA L= 25 mH
500
V
I
E
= 10 mA
10
V
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
0.5
0.7
1.1
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
1
1.1
1.2
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 3 A V
CE
= 2.5 V
8
8
13.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5 V R
BB
= 0
V
CL
= 250 V L = 200
μ
H
(see fig. 1)
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5V R
BB
= 0
V
CL
= 250 V L = 200
μ
H
T
j
= 125
C (see fig. 1)
1.2
80
1.9
160
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
1.8
150
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL312FP
2/6
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