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參數(shù)資料
| 型號： | BUL1203EFP |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 216K |
| 代理商： | BUL1203EFP |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
V
CE
= 1200 V
100
μ
A
I
CEO
V
CE
= 550 V
100
μ
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA L = 25 mH
550
V
I
E
= 10 mA
9
V
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 1 A
0.5
0.7
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 1 A
1.5
1.5
V
V
h
FE
DC Current Gain
I
C
= 1 mA V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.8 A V
CE
= 3 V
I
C
= 2 A V
CE
= 5 V
I
C
= 2 A I
B1
= 0.4 A
I
B2
= -0.8 A tp = 30
μ
s
V
CC
= 150 V (see figure 2)
10
10
14
9
32
28
t
on
t
s
t
f
E
ar
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
2.5
0.2
0.5
3.0
0.3
μ
s
μ
s
μ
s
mJ
Repetitive Avalanche
Energy
L = 2 mH C = 1.8 nF
V
CC
= 50 V V
BE
= -5 V
(see figure 3)
6
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BUL1203EFP
2/7
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| BUL128_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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