參數(shù)資料
型號: BUK9624-56
廠商: NXP Semiconductors N.V.
英文描述: TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶體管邏輯電平FET)
中文描述: TrenchMOS(商標)場效應晶體管邏輯電平(TrenchMOS(商標)晶體管邏輯電平場效應管)
文件頁數(shù): 4/8頁
文件大?。?/td> 68K
代理商: BUK9624-56
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9624-55
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
0
20
40
60
80
100
10
8
6
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
ID/A
VSD/V
VGS/V =
0
20
40
60
80
100
5
10
15
20
25
30
35
40
gfs/S
ID/A
15
20
25
30
35
40
10
15
20
25
30
35
40
ID/A
45
50
55
60
65
70
75
RDS(ON)/mOhm
VGS/V =
4
4.2
4.4
4.6
4.8
5
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0
1
2
3
4
5
6
7
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175
25
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998
4
Rev 1.000
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