參數(shù)資料
型號: BUK9623-75A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)直|第53A條(?。﹟對263AB
文件頁數(shù): 10/15頁
文件大小: 315K
代理商: BUK9623-75A
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
4 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on printed circuit board;
minimum footprint; SOT404
package
50
K/W
Rth(j-mb)
thermal resistance from junction to mounting
base
0.65
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nb45
Single Shot
0.2
0.1
0.05
0.02
0.001
0.01
0.1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
δ = 0.05
tp
T
P
t
T
δ =
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