參數(shù)資料
型號： BUK9620-100A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 5/15頁
文件大小： 321K
代理商： BUK9620-100A
Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS logic level FET
Product specification
Rev. 01 — 7 February 2001
5 of 15
9397 750 07915
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
100
89
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 100 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 25 A
V
GS
= 10 V; I
D
= 25 A
1
0.5
1.5
2
2.3
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
17
16
20
50
22
19
m
m
m
m
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
4790
450
270
35
143
288
131
4.5
6385
542
400
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 5 V; R
G
= 10
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
3.5
nH
2.5
nH
L
s
internal source inductance
7.5
nH
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