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參數(shù)資料
| 型號： | BUK9608-55A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 75A條（?。﹟對263AB |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 327K |
| 代理商： | BUK9608-55A |
Philips Semiconductors
BUK95/9608-55A
TrenchMOS logic level FET
Product data
Rev. 03 — 6 May 2002
6 of 14
9397 750 09573
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
-
0.85
1.2
V
trr
reverse recovery time
IS =75A; dIS/dt = 100 A/s
VGS = 10 V; VDS =25V
-70
-
ns
Qr
recovered charge
-
170
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
a=RDSon/RDSon(25 °C)
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ni47
0
100
200
300
400
02468
10
VDS (V)
ID
(A)
10
6
8
label is VGS (V)
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.2
2.4
03ni46
5
6
7
8
9
0
5
10
15
VGS (V)
RDSon
(m
)
03ni48
5
10
15
20
0
100
200
300
400
ID (A)
RDSon
(m
)
VGS = 3 V
3.2 V
3.4 V
3.6 V
3.8 V
4 V
5 V
10 V
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK9608-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9608-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9608-55B | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 75A SOT404 |
| BUK9608-55B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9608-55B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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