參數(shù)資料
型號: BUK9240-100A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直|第33A條(?。﹟對252AA
文件頁數(shù): 9/13頁
文件大小: 291K
代理商: BUK9240-100A
Philips Semiconductors
BUK9240-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 03 October 2000
5 of 13
9397 750 07573
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Figure 7 and 8
Tj =25 °C
34
40
m
Tj = 175 °C
100
m
VGS = 4.5 V; ID =25A;
Tj =25 °C
44.6
m
VGS =10V; ID =25 A;
Tj =25°C
33
38.6
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
2304
3072
pF
Coss
output capacitance
222
266.4
pF
Crss
reverse transfer capacitance
151
207
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
20
ns
tr
rise time
135
ns
td(off)
turn-off delay time
125
ns
tf
fall time
90
ns
Ld
internal drain inductance
measured from drain lead
from package to centre of
die
2.5
nH
Ls
internal source inductance
measured from source lead
from package to source
bond pad
7.5
nH
相關(guān)PDF資料
PDF描述
BUK9509-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-220AB
BUK9523-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-220AB
BUK952R8-30B TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
BUK9535-100A TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 41A I(D) | TO-220AB
BUK953R2-40B TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9240-100A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9240-100A/C1,11 功能描述:MOSFET TranMOSFET N-CH 100V 33A 3-Pin(2+Tab)DPAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9240-100A118 制造商:NXP Semiconductors 功能描述:N CH MOSFET TRENCH AUTOMOTIVE 100V 33
BUK9245-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET
BUK9245-55A /T3 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube