參數(shù)資料
型號(hào)： BUK9107-40ATC
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426
中文描述： 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 75A條（丁）|的SOT - 426
文件頁(yè)數(shù)： 13/16頁(yè)
文件大小： 382K
代理商： BUK9107-40ATC
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
6 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DG
drain-gate zener breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C40
-
V
Tj = 55 °C40
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj =25 °C
-
0.1
100
A
Tj = 175 °C
-
250
A
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
55 °C<Tj < 175 °C
12
15
-
V
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
5
1000
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =50A;
Tj =25 °C
-
5.8
7
m
Tj = 175 °C-
-
14
m
VGS = 4.5 V; ID =50A
-
6
7.7
m
VGS =10V; ID = 50 A
-
5.2
6.2
m
VF
temperature sense diode
forward voltage
IF = 250 A
648
658
668
mV
SF
temperature sense diode
temperature coefcient
IF = 250 A;
55 °C<Tj < 175 °C
1.4
1.54
1.68
mV/K
Vhys
temperature sense diode
forward voltage hysteresis
125
A<IF < 250 A
253250mV
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
5836
-
pF
Coss
output capacitance
-
958
-
pF
Crss
reverse transfer capacitance
-
595
-
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =1k
-3
-
s
tr
rise time
-
10
-
s
td(off)
turn-off delay time
-
17
-
s
tf
fall time
-
11
-
s
Ld
internal drain inductance
measured from upper edge
of drain mounting base to
centre of die
-
2.5
-
nH
相關(guān)PDF資料
PDF描述
BUK9107-55ATE TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426
BUK9240-100A TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-252AA
BUK9509-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-220AB
BUK9523-75A TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-220AB
BUK952R8-30B TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9107-40ATC /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9107-40ATC,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9107-55ATE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426
BUK9107-55ATE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9107-55ATE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*